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Thomas Hempel
1 works
Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties
J. Holst
,
M. Straßburg
,
N. N. Ledentsov
+13
Article
GaN-based semiconductor devices and materials
Materials science forum
1998
0 citations
ABI
ABI:AkademIndex/openalex/1998.article.000219