Anna Volkova

1 works

Ioffe Institute of RAS

1. Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

   A. А. Lebedev, Oleg Ledyaev, Anatoly M. Strel’chuk +6

   ArticleGaN-based semiconductor devices and materialsMaterials science forum20060 citations

   ABIABI:AkademIndex/openalex/2006.article.000281