The effective mass of electrons in (InSb)<sub>x</sub>·(InTe)<sub>1−x</sub> crystals
I. P. MolodyanD. N. NasledovA.F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, LeningradС. И. РадауцанKishinev Potytechnical InstituteV. G. SidorovA.F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad
ABI
Abstract
Abstract Measurements of the thermoelectric power, transverse Nernst‐Ettinghausen effect, conductivity, and Hall effect allow the concentration and temperature dependence of the electronic effective mass m * to be calculated for crystals of the solid solution (InSb) x (InTe) 1—x (for × = 1 to 0.85) in the temperature range 100 to 370 °K. Solid solutions having × > 0.99 (I) behave like InSb doped with tellurium, and crystals of this type having electron concentrations ( n ) greater than 2 × 10 18 cm −3 show an m * ( n ) dependence which differs from that predicted by Kane. Solid solutions with x ≦ 0.99 (II) show a different temperature dependence of m * from those with x > 0.99.
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