Channeling of low energy ions on single crystal surfaces
U.A. ArifovInstitute for Electronics , Tashkent, U.S.S.RD. D. GruichInstitute for Electronics , Tashkent, U.S.S.RG. E. ErmakovInstitute for Electronics , Tashkent, U.S.S.RE. KhalmirzayevInstitute for Electronics , Tashkent, U.S.S.R
ABI
Abstract
Abstract It has been shown previously that the series of maxima and minima observed in the angular distribution of ions scattered by single crystals or passed through thin films at high ion energies are explained by the channeling effect. This paper studies the channeling effect of alkali ions in W, Mo and KCI single crystals under high vacuum (5. 10−8 torr) within the pre-threshold energy range (50–400 eV) where channeling can still be traced.
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