Article

Electrical and optical properties of the magnetic semiconductor MnTe

Yu. V. PereverzevPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRL. V. PovstyanyiPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRA. I. ZvyaginPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR

Soviet Journal of Low Temperature Physicsjournal1976en

ABI

Abstract

The electrical and optical properties of the antiferromagnetic semiconductor MnTe (TN =307°K) are investigated in the temperature interval 4.2−350°K. The temperature dependence of the electrical resistivity ρ(T) is calculated allowing for carrier scattering by magnons and optical and acoustic phonons and also for “drag” effects. It is shown that the resistivity is due primarily to optical phonons. The calculated and experimental curves are in good agreement up to TN.

Topics

Heusler alloys: electronic and magnetic properties Chalcogenide Semiconductor Thin Films 2D Materials and Applications

Identifiers

DOI: 10.1063/10.0029306

Citations and references

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