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Effect of <i>B</i>-subgroup elements on residual electric resistivity of bivalent metals

Β. N. AleksandrovPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRV. V. DukinPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR
ABI

Abstract

The effect of 11 impurities (Ge, Tl, Au, Ag, Mg, Hg, Ga, Al, In, Cu, and Cd) on the residual electric resistivity ρ0 of zinc is studied. The alloys were zinc-based, the zinc having a relative bulk resistivity δo = ρ0/ρ293 between 1⋅10−4 and 1⋅8-10−4 in the range of concentrations 1⋅10−4−2 wt.%. The values of Δρ/c (the changes in the residual resistivity of zinc per 1 at.% impurity dissolved) obtained display a quadratic dependence on the difference ΔZ between the valences of the IV-VI period impurities and the host material. Values of Δρ0/c for zinc-based alloys and alloys based on other bivalent metals (Mg, Cd, Hg) calculated by the phase shift method and pseudopotential theory (the Appapilai form factors found from first principles or the Ashcroft model pseudopotential were used) are only in satisfactory agreement with the experimental data. The effective conduction electron number per atom neff found for all four host metals in the three calculations (other than for a single case) are much less than Zm = 2 (valence of the metal).

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