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Work: Backscattering measurements of postimplantation damage profiles in silicon single crystals

  1. Channeling and related effects in the motion of charged particles through crystals

    D. S. Gemmell

    Article19749 citations
    ABI
  2. A model for the formation of amorphous Si by ion bombardment

    F. F. Morehead, B. L. Crowder

    Article19702 citations
    ABI
  3. Untitled

    Other1 citations
    ABI
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    Other1 citations
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    Other1 citations
    ABI
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    Other1 citations
    ABI
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    Other1 citations
    ABI
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    Other1 citations
    ABI
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    Other1 citations
    ABI
  10. Untitled

    Other1 citations
    ABI