Nonequilibrium states of normal metal films during tunneling injection of electrons
V. P. SeminozhenkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR
ABI
Abstract
The nonequilibrium states of a metal film in the normal (N) state in an S-I-N-I-S structure (S is a bulk superconductor and I is an insulator) are studied when a voltage V > Δ/e is applied to each tunnel diode in the same direction (Δ is the energy gap of the S electrode and e is the electron charge). Conditions are found in which the energy distribution of electrons near the Fermi surface of the N film is inverted.
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