Article

Effect of impurities on the residual resistance of niobium

Β. N. AleksandrovPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRG. P. KovtunPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRV. A. ElenskiǐPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR

Soviet Journal of Low Temperature Physicsjournal1979en

ABI

Abstract

The effect of three impurities, Ru, Re, and Os, on the electrical resistance of niobium at 20.4 and 77.3 °K was studied. Using 99.95% pure niobium with residual resistivity ratio ρ0/ρ293 = 7·10−2 specimens were prepared over the concentration range of 0.3 to 5% by weight. At 20.4 °K values of Δ ρ/c of 2.7, 2.2, and 1.4 μΩ·cm/at. % were found for Ru, Os, and Re, respectively. Data for 15 other impurity elements in niobium, found in the literature and often very approximate, are presented.

Topics

Metal and Thin Film Mechanics Semiconductor materials and interfaces Semiconductor materials and devices

Identifiers

DOI: 10.1063/10.0029870

Citations and references

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