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Influence of copper impurity and structure defects on the properties of compound CdSnAs2

Olga V. VoevodinaV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskA. P. VyatkinV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskT. V. VedernikovaV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskV. G. VoevodinV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskM. A. KrivovV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskYa. I. OtmanV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, Tomsk
Russian Physics Journaljournal1980en
ABI

Abstract

No abstract available.

Topics

Advanced Research in Systems and Signal ProcessingSemiconductor materials and interfacesChalcogenide Semiconductor Thin Films

Identifiers

DOI
10.1007/bf00891640

Citations and references

Cited by 03 references
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