Peculiarities of an Electromotive Force Arising in a Scemionductor in a Non‐Homogeneous Magnetic Field (II)
Sh. A. GulamovS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbekian SSR, TashkentYu. A. KatulevskiiS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbekian SSR, TashkentР. А. МуминовS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbekian SSR, Tashkent
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Abstract
Abstract The spatial distributions of current carriers and the electric field as well as the expression for the electromotive force are found for the homogeneous semiconductor placed only into a non‐homogeneous magnetic field for the case when the semiconductor length in the direction of the magnetic fields gradient far exceeds the bipolar diffusion length of current carriers. The magnetic field is supposed to be non‐quantized. It is shown that these characteristics strongly depend on the spatial structure of the magnetic field. The special case of linear coordinate dependence of the magnetic field is considered.
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