Article

Singularities in the magnetoresistance of bismuth thin films in the region of quantum corrections

E. I. BukhshtabPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovYu. F. KomnikPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovА. В. БутенкоPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovВ. В. АндриевскииPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kov

Soviet Journal of Low Temperature Physicsjournal1982en

ABI

Abstract

The anomalous dependences of the resistance of bismuth thin films (∼ 10‒6 cm) on perpendicular and parallel magnetic fields up to 17 kOe were investigated at 1.5–4.2 °K. The resulting relations were compared with the theory which incorporates quantum corrections to the magnetoresistance related to electron localization and the interference of electron-electron and impurity scattering. The corresponding values of the parameters of the theory are consistent with all the dependences investigated: σ(T), σ(H‖), and σ(H⊥).

Topics

Quantum and electron transport phenomena Topological Materials and Phenomena Physics of Superconductivity and Magnetism

Identifiers

DOI: 10.1063/10.0030698

Citations and references

Cited by 02 references

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