Uhf absorption of electrons above a helium film
V. I. KaramushkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovYu. Z. KovdryaPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovФ. Ф. МендеPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovВ. А. НиколаенкоPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kov
ABI
Abstract
The uhf absorption of electrons localized above a helium film on a dielectric surface is measured at a frequency of ∼ 10 GHz. Absorption was determined from the change in the Q of a superconductive resonator when a dielectric insert located in the resonator and wetted by the helium film was charged with electrons. Electron mobility above the helium film is determined and it is shown that the value of this mobility is apparently determined by localization of electrons on substrate defects. A new type of bound surface state is recorded – electrons on the helium film, localized above positive ions bound to the dielectric substrate.
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