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Fluctuation conductivity of thin superconductive vanadium films

I. M. DmitrenkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovA. S. SidorenkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovN. Ya. Fogel’Physicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kov
ABI

Abstract

Resistive transitions into the superconductive state are studied in thin [d <ξ(t)] vanadium films. For temperatures T≫Tc the experimental data on the excess conductivity of the films agree qualitatively and quantitively with Aslamazov–Larkin theory. There is no Maki–Thompson contribution to fluctuation conductivity. Near Tc the excess conductivity σ′ changes exponentially with temperature in accordance with the predictions of the theory of the critical fluctuations of the order parameter. The values of the effective charge carrier mass defined from data on σ′ for the low fluctuation and critical fluctuation regions differ markedly. This difference is within the spread of effective masses for various charge carrier groups already known for vanadium. Causes of the difference in resistive behavior for the regions T≲Tc and T≫Tc are considered.

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