Effect of electron localization in bismuth films: The influence of surface scattering
Abstract
The electron localization effect in thin bismuth films (100-200 Å thick) leads to an anomalous positive magnetoresistance due to strong spin-orbit interaction for elastic scattering of electrons (τso≪τɸ, where τso is the spin relaxation time due to spin-orbit interaction for elastic scattering of electrons, τɸ is the inelastic scattering time. It was found that on increasing the film thickness (L > 200 Å) a negative component of magnetoresistance appears that is specially pronounced in parallel fields. The change in the shape of the magnetoresistance curves is related to the increase in τso on increasing the thickness as a result of decreased surface scattering; a parallel magnetic field then has an additional influence on the surface scattering contribution.