Experimental investigation of the strong localization of 3He atoms in 4He crystals
В. А. МихеевPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR , Khar'kovV. A. Maı̆danovPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR , Khar'kovN. P. MikhinPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR , Khar'kov
ABI
Abstract
Nuclear magnetic resonance measurements have been made of the diffusion coefficient D of the impurity in solid 4He containing 2–4% 3He. It has been shown that in the region of the low-temperature plateau as the 3He concentration increases, the diffusion coefficient D decreases sharply, which is indicative of the strong localization of 3He atoms in hcp phase of solid 4He. Under these conditions D has been observed to grow gradually as the temperature rises, which is in accordance with Kagan's theory of phonon-stimulated coherent quantum diffusion.
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