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Oscillation galvanomagnetic effects in thin bicrystalline conductors

Yu. A. KolesnichenkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovV. G. Peschanskiı̆Physicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov
ABI

Abstract

In bicrystals charge carriers, for which the laws of conservation of energy and tangential component of the quasimomentum are not satisfied during tunneling across the intercrystallite boundary, undergo total internal reflection by a perfect crystalline interface (CI).1 In a magnetic field parallel to the CI electrons moving along strictly periodic trajectories that do not intersect the interface form quantum oscillations of the electrical conductivity. When the vector H deviates from the CI Sondheimer oscillations with a new period, which is determined by the boundary value of the quasimomentum, appear in the conductivity of thin bicrystals, and at this period the probability of electron tunneling becomes zero. The study of the oscillation effects in bicrystals provides new information about the carrier dispersion relation and the disorientation angles of adjacent crystallites.

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