Contribution to the theory of configurational relaxation of doped quantum crystals
M. A. Strzhemechnyı̆Physicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovO. I. Tokar’Physicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov
ABI
Abstract
Using the example of dilute solid solutions of helium isotopes, we construct a theory of the configurational relaxation of quantum crystals that takes account of the finite rate of quantum diffusion. The probabilities of elementary processes leading to the formation and dissociation of impurity nearest-neighbor pairs are considered in detail. The configurational relaxation problem is solved within the framework of a model in which the kinetics of a chosen pair of impurities at sufficiently large interimpurity distances is described by the diffusion equation with appropriate boundary conditions.
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