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Computer simulation of proton channeling catch‐up in bent crystals

A.M. TaratinInstitute of Nuclear Physics, Tomsk Polytechnical InstituteS.A. VorobievInstitute of Nuclear Physics, Tomsk Polytechnical Institute
physica status solidi (b)journal1986en
ABI

Abstract

Abstract A detailed computer simulation of the catch‐up effect for a 1 GeV proton beam in a uniformly bent silicon crystal is performed. The dependences of the efficiency of proton catch‐up in the channeling regime on bending radius of the crystal and on incidence angle of the beam are reported.

Topics

Crystallography and Radiation PhenomenaAdvanced X-ray Imaging TechniquesAdvanced Electron Microscopy Techniques and Applications

Identifiers

DOI
10.1002/pssb.2221330210

Citations and references

Cited by 03 references
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