Effect of impurities on the residual resistivity of refractory metals
Β. N. AleksandrovPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kov
ABI
Abstract
The values or Δρ0/c (change in the residual resistivity of the metal-matrix accompanying dissolution of 1 at. % impurity) for 8−14 different impurities in each of the seven metals W, Re, Ta, Mo, Ru, Ir, and Rh, are determined from the published experimental data on the dependences of the resistivity ρ for these metals on the concentration c of the dissolved impurity. The change in Δρ0/c as a function of the mutual position of the impurity and the matrix in the periodic table is studied. The values of Δρ0/c are predicted for the impurities Cr, Os, Tc, and Mn in several matrices. It is established that the effect of oxygen on the residual resistivity ρ0 for group V metals is weaker than for group IV metals.
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