Induced defect formation in neon cryocrystals under exciton self-trapping
E. V. SavchenkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovYu. I. RybalkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovI. Ya. Fugol’Physicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov
ABI
Abstract
Lattice relaxation processes are studied under self-trapping in the atomic states. The emission spectra of single-center self-trapped excitons in pure Ne and in Ne with Ar, Kr, or Xe as impurities are studied. The contributions of self-trapping in a regular lattice and at initial defects are separated. It is found that local deformations appearing around an excited center in a regular Ne lattice under the action of the electron component during exciton self-trapping lead to structural defects which persist even after the annihilation of the excitation.
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