Diffusive creep in low-density hcp crystals of 4He
N. E. DyuminPhysicotechnical Institute of Low Temperature, Academy of Sciences of the Ukrainian SSR, KharkovN. V. ZuevPhysicotechnical Institute of Low Temperature, Academy of Sciences of the Ukrainian SSR, KharkovV. N. Grigor’evPhysicotechnical Institute of Low Temperature, Academy of Sciences of the Ukrainian SSR, Kharkov
ABI
Abstract
The diffusive creep rate of solid 4He for a molar volume 20.65 cm3 has been measured in the temperature range 1.70–1.32 K. It is found that the creep rate decreases sharply upon a decrease in temperature, and its magnitude varies by a factor of four from crystal to crystal. The self-diffusion coefficient of 4He and the vacancy diffusion coefficient have been determined. It is shown that in the investigated temperature interval, diffusion processes can be described in the framework of classical concepts about the nature of vacancy movement taking into account the anisotropy along the principal axes of the hcp lattice of 4He.
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