Article

The Aharonov–Bohm effect in narrow-band semiconductors

É. N. BogachekPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov

Soviet Journal of Low Temperature Physicsjournal1990en

ABI

Abstract

The Aharonov–Bohm effect is investigated in nonsingly connected semiconductors. The effect is manifested in the oscillating dependence of the magnetic moment (as well as persistent current) having the fundamental period hc/e and caused by the polarization of electrons in the valence band by the vector potential field.

Topics

Quantum and electron transport phenomena Semiconductor materials and devices Semiconductor materials and interfaces

Identifiers

DOI: 10.1063/10.0032711

Citations and references

Cited by 06 references

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