Article

Electrical properties of p-type ZnGeP2 irradiated by H+ ions

V. N. Brudnyı̆V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskV. A. NovikovV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk

Russian Physics Journaljournal1991en

ABI

Abstract

No abstract available.

Topics

Semiconductor materials and interfaces Chalcogenide Semiconductor Thin Films

Identifiers

DOI: 10.1007/bf00898592

Citations and references

Cited by 02 references

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