Temperature dependence of the resistivity of systems with heavy fermions
A. M. ZagoskinB. I. Verkin Physicotechnical Institute of Low Temperatures, Academy of Sciences, 310164, Khar’kov, pr. Lenina, 47A. S. RozhavskiǐB. I. Verkin Physicotechnical Institute of Low Temperatures, Academy of Sciences, 310164, Khar’kov, pr. Lenina, 47I. G. Tuluzov
ABI
Abstract
We propose on the basis of a two-band model of heavy-fermion systems a nonmagnetic mechanism for the nonlinear temperature dependence of the resistivity. The mechanism is based on the competition between the temperature–induced increase in the intensity of electron-phonon scattering and the decrease in the effective carrier mass on the Fermi surface as a result of the strong temperature dependence of the chemical potential. The qualitative form of the basic types of experimental curves ρ(T) as a function of the parameters of the system (width of the narrow band, interband hybridization potential, position of the Fermi level, and intensity of electron-phonon and electron-impurity interactions) is reporduced correctly.
Topics
Identifiers
Citations and references
Cited by 08 references