Inelastic relaxation time of electrons in thin bismuth films
Yu. F. KomnikB. I. Verkin Physicotechnical Institute of Low Temperatures, Ukrainian Academy of Sciences, KharkovV. Yu. KashirinB. I. Verkin Physicotechnical Institute of Low Temperatures, Ukrainian Academy of Sciences, Kharkov
ABI
Abstract
The temperature dependences of the time τφ of inelastic electron interaction have been obtained for various values of the electric current from an analysis of the magnetic field dependences of the localized correction to the conductivity of bismuth films of thickness ∼ 100 Å. The temperature dependence of the electron–phonon energy relaxation time has been obtained from the electron superheating effect which is manifested in a change in the shape of the τφ(T) dependence under the influence of the heating current. The electron–phonon scattering time is compared with the contribution of electron-phonon interaction processes to the electron phase relaxation.
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