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Effect of alloy composition on defect formation in GexSi1−x/Si heterostructures obtained by molecular beam epitaxy

V. I. VdovinInstitute of Rare Metals, 109017 Moscow, Russian FederationM. G. Mil’vidskiĭInstitute of Rare Metals, 109017 Moscow, Russian FederationT. G. YugovaInstitute of Rare Metals, 109017 Moscow, Russian FederationK. LyutovichInstitute of Electronics, Uzbek Academy of Sciences, 700143 Tashkent, UzbekistanSafo SaidovInstitute of Electronics, Uzbek Academy of Sciences, 700143 Tashkent, Uzbekistan
Journal of Crystal Growthjournal1994en
ABI

Abstract

No abstract available.

Topics

Semiconductor materials and interfacesAdvanced Materials Characterization TechniquesElectron and X-Ray Spectroscopy Techniques

Identifiers

DOI
10.1016/0022-0248(94)90100-7

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Cited by 015 references
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