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Thermal conductivity of solid hydrogen with argon impurity

B. Ya. GorodilovB. I. Verkin Physicotechnical Institute of Low Temperatures, Ukranian, Academy of Sciences, 310164 KharkovА. И. КривчиковB. I. Verkin Physicotechnical Institute of Low Temperatures, Ukranian, Academy of Sciences, 310164 KharkovV. G. ManzhelliB. I. Verkin Physicotechnical Institute of Low Temperatures, Ukranian, Academy of Sciences, 310164 KharkovN. N. ZholonkoB. I. Verkin Physicotechnical Institute of Low Temperatures, Ukranian, Academy of Sciences, 310164 Kharkov
Low Temperature Physicsjournal1994en
ABI

Abstract

Thermal conductivity of solid parahydrogen with 0.4 and 1.3 ppm argon impurity has been measured by using the standard procedure in the temperature range 1.5−8 K. The unusual dependence of the thermal conductivity on temperature and molecular weight of the impurity is explained by a new model of scattering of phonons by a heavy nonisotopic impurity. The difference between the new mechanism and the resonance mechanism is due to the fact that an argon atom interacts with the surroundings in a parahydrogen crystal much more strongly than a hydrogen molecule. Among other things, it causes a sharp decrease in the contribution from high-frequency phonons to the impurity scattering.

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