Quantum corrections to the temperature dependence of conductivity of Bi films in a strong electric field. II. Coulomb correction
Abstract
Temperature dependence of the quantum correction to the conductivity of thin (∼100 Å) Bi films, which is associated with the enhancement of the electron–electron interaction (Coulomb correction), is investigated under the effect of electron overheating. It is found that, in the case of a strong current, the Coulomb correction decreases as a result of an increase in the electron temperature, but this is not the only reason behind this effect. The influence of a change in the interaction between electrons due to the drift of charge carriers in the electric field is also observed. This effect is discussed together with a change in the contribution of quantum corrections to the magnetoresistance of thin Bi films under the influence of the electric fields [V. Yu. Kashirin and Yu. F. Komnik, Fiz. Nizk. Temp. 19, 165 (1993); Sov. J. Low Temp. Phys. 19, 117 (1993)].