Photoluminescence Quenching in Polysilanes by Fullerene Doping and Effective Photoinduced Charge Transfer Depending on Aromatic Side Group
Katsumi YoshinoFaculty of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565, JapanKenji YoshimotoFaculty of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565, JapanMaki HamaguchiFaculty of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565, JapanTsuyoshi KawaiFaculty of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565, JapanAnvar ZakhidovUzbekistan Academy of SciencesHideki UenoOsaka R & D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554, JapanMasaya KakimotoOsaka R & D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554, JapanHiroyuki KojimaOsaka R & D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554, Japan
ABI
Abstract
Photoluminescence of polysilanes with aromatic side groups has been found to be strongly quenched upon C 60 doping, in contrast to the case of polysilanes with saturated hydrocarbon side groups in which a clear quenching effect has not been observed. These results have been interpreted by considering the role of the aromatic side group as a mediator for photoinduced electron transfer from electronic states of the main chain polysilanes to the C 60 molecule.
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