ZnGeP2 heterocontact with layered III–VI semiconductors
V. Yu. Rud’A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg State Technical University, St. PetersburgYu. V. RudA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg State Technical University, St. Petersburg
ABI
Abstract
The photoelectric properties of heterojunctions fabricated by clamping wafers of ternary p-ZnGeP2 and InSe and GaSe layered semiconductors onto an optical contact have been studied for the first time and results are reported. The photosensitivity in these structures is greatest when they are illuminated from the side with the ZnGeP2 wafer, and reaches 150 V/W at T=300 K. In InSe/ZnGeP2 heterostructures, a window effect is observed in the range 1.2–2 eV, whereas for GaSe/ZnGeP2 structures, the photovoltaic effect has a maximum near 2 eV because of the proximity of the band gaps in the contacting semiconductors.
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