Diffusion of promethium in silicon
D. É. NazyrovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, M. Ulukbek Tashkent State University, St. PetersburgG. S. KulikovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, M. Ulukbek Tashkent State University, St. PetersburgR. Sh. MalkovichA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, M. Ulukbek Tashkent State University, St. Petersburg
ABI
Abstract
The first investigations have been made on the diffusion of promethium in silicon. In the temperature range from 1100 to 1250 °C the diffusion constant of promethium increases from ∼1×10−13 cm2/s to ∼1.5×10−12 cm2/s. The temperature dependence of the diffusion coefficient can be described by D = 5 x 10−1 exp[-(3.3 eV/kT]cm2/s.
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