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HVPE GaN and AIGaN 'Substrates' for Homoepitaxy

Yu. MelnikIoffe Physicotechnical Institute RASA. E. NikolaevIoffe Physicotechnical Institute RASС. И. СтепановArgonne National LaboratoryI. KikitinaKonstantin VassilevskiNewcastle UniversityA. V. AnkudinovYu. G. MusikhinV. Dmitriev
Materials science forumbook series1998en
ABI

Abstract

No abstract available.

Topics

GaN-based semiconductor devices and materialsSemiconductor materials and devices

Identifiers

DOI
10.4028/www.scientific.net/msf.264-268.1121

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Cited by 00 references
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