Photoluminescence of II–IV–V2 and I–III–VI2 crystals passivated in a sulfide solution
В. Н. БессоловA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgМ. В. ЛебедевA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. Yu. Rud’State Technical University, St. PetersburgYu. V. RudA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Abstract
An investigation was made to determine how chemical treatment of the surface of II–IV–V2 and I–III–VI2 semiconductor crystals (such as CdSiAs2, ZnSnP2, CuGaSe2, and r-AgInS2) using a solution of ammonium sulfide in tert-butyl alcohol influences their photoluminescence properties. It is shown that the photoluminescence intensity is enhanced substantially after treatment with the spectral profile and energy position of the band peaks remaining unchanged.
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