Article

Near-threshold mode synchronization and Q switching in diode lasers with a fast saturated absorber

A. E. GubenkoA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgG. VenusA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgI. M. GadzhievA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgE. L. PortnoĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

Technical Physics Lettersjournal1999en

ABI

Abstract

The near-threshold lasing regimes of AlGaAs lasers with an implanted saturated absorber under short pulsed pumping are investigated experimentally. A near-threshold modesynchronization regime is obtained.

Topics

Optical Network Technologies Semiconductor Lasers and Optical Devices Advanced Fiber Laser Technologies

Identifiers

DOI: 10.1134/1.1262475

Citations and references

Cited by 05 references

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