Picosecond semiconductor lasers with a multisection saturable absorber, fabricated by heavy ion implantation
G. VenusA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgI. M. GadzhievA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. E. GubenkoA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. D. Il’inskayaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,E. L. PortnoĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Abstract
A method of implanting high-energy heavy ions across the emitter layer of a semiconductor laser has been developed to create distributed regions of ultrafast saturable absorber integrated into the cavity of a quantum-well laser. This method was used to fabricate picosecond laser diodes having high average powers and to demonstrate colliding-pulse mode-locking of a diode laser with a multisection saturable absorber.
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