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Photovoltaic properties of semiconductor-protein heterocontacts

V. Yu. Rud’A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. V. RudSt. Petersburg State Technical University, St. PetersburgV. Kh. ShpuntA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
Technical Physics Lettersjournal1999en
ABI

Abstract

It is found that heterocontacts consisting of a semiconductor (e.g., InSe) and a natural protein exhibit a broad-band photovoltaic effect and do not display an appreciable shortwavelength drop in the spectral range from 1.2 to 3.7 eV. The maximum photosensitivity of such structures, which reaches 2 mA/W at T=300 K, is observed when they are illuminated on the protein side. It is concluded that the structures created can be employed as broad-band photosensors of optical radiation.

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