n(p)-InP-n-In2O3-P2O5-Pd diode structures as potential sensors for near-infrared radiation, moisture, and hydrogen
S. V. SlobodchikovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgХ. М. СалиховA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Abstract
Diode structures based on n(p)-InP with intermediate n-In2O3 and P2O5 layers were fabricated by electrochemical deposition of Pd. It is shown that when exposed to pulses of water vapor the photo-emf of the structures varies by 60–400% and in the presence of H2 it can vary by 1.5–2 orders of magnitude. These n(p)-InP-n-In2O3-P2O5-Pd structures are potential sensors for near-infrared radiation, moisture, and hydrogen.
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