Works cited by this work

10 works

Work: Properties of precisely compensated semiconductors

1. Efficiency improvements of silicon solar cells by the impurity photovoltaic effect

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   ABIABI:AkademIndex/openalex/2026.other.362872

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   A. G. Milnes

   Book197312 citations

   ABIABI:AkademIndex/openalex/2026.other.364962

3. Deep impurities in semiconductors

   J. Llacer

   Article197411 citations

   ABIABI:AkademIndex/openalex/2026.other.364964

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   Article19815 citations

   ABIABI:AkademIndex/openalex/2026.other.256884

5. Character of the dependences of non-equilibrium electron and hole lifetimes on the concentration of recombination centres in impurity-type-recombination semiconductors

   Albina A. Drugova, V. A. Kholodnov

   Article19953 citations

   ABIABI:AkademIndex/openalex/2026.other.396757

6. The Physics of Semiconductors

   E. Anastassakis, John D. Joannopoulos

   Preprint19903 citations

   ABIABI:AkademIndex/openalex/2026.other.396762

7. Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon

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   ABIABI:AkademIndex/openalex/2026.other.396761

8. Untitled

   Other1 citations

   ABIABI:AkademIndex/openalex/2026.other.396758

9. Untitled

   Other1 citations

   ABIABI:AkademIndex/openalex/2026.other.396759

10. Untitled

    Other1 citations

    ABIABI:AkademIndex/openalex/2026.other.396760