Article

Electrical and Optical Properties of ZnO Films Grown on GaAs Substrates

Sh. U. YuldashevQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Chungku Pildong, Seoul 100-715, KoreaГ. Н. ПанинQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Chungku Pildong, Seoul 100-715, KoreaSungwoo ChoiQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Chungku Pildong, Seoul 100-715, KoreaVadim Sh. YalishevHeat Physics Department, Academy of Sciences, Katartal str. 28, Tashkent 700135, UzbekistanL. NosovaHeat Physics Department, Academy of Sciences, Katartal str. 28, Tashkent 700135, UzbekistanMin Ki RyuDepartment of Physics, Pusan National University, San 30, Changjeon-Dong, Keumjeong-Ku, Pusan 609-735, KoreaSanghern LeeDepartment of Physics, Pusan National University, San 30, Changjeon-Dong, Keumjeong-Ku, Pusan 609-735, KoreaMin Su JangDepartment of Physics, Pusan National University, San 30, Changjeon-Dong, Keumjeong-Ku, Pusan 609-735, KoreaKwan Soo ChungDepartment of Electronics Engineering, Kyung Hee University, 1 Seocheon-Ri, Kiheung Eup, Yongin-City, Kyungki-Do 449-701, KoreaTae Won KangQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Chungku Pildong, Seoul 100-715, Korea

Japanese Journal of Applied Physicsjournal2003en

ABI

Abstract

Undoped ZnO films were deposited on GaAs substrates by conventional rf magnetron sputtering technique. After thermal annealing at temperatures of 500°C and higher for 20 min, the Hall coefficient of ZnO films on GaAs substrate becomes positive. The long-time annealing of 550 min at a temperature of 400°C also converts the sign of the Hall coefficient to positive. X-ray microanalysis shows that the diffusion of Zn atoms into the GaAs substrate and Ga atoms from the GaAs substrate into the ZnO film during thermal annealing occurs. The results of Hall measurements were analyzed by using the two-layer model of conductivity. It was shown that the positive sign of the Hall coefficient for the annealed ZnO film on the GaAs substrate is due to p-type conductivity of the GaAs substrate as a result of the diffusion of the Zn atoms from ZnO film into the GaAs substrate. With increasing annealing temperature or annealing time the ZnO films become more n-type due to the diffusion of Ga atoms from the GaAs substrate into the ZnO film.

Topics

ZnO doping and properties GaN-based semiconductor devices and materials

Identifiers

DOI: 10.1143/jjap.42.3333

Citations and references

Cited by 1 4 references

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