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Work: Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

  1. Untitled

    Other6 citations
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  2. Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

    N.S. Savkina, A. А. Lebedev, D. V. Davydov +13

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  3. MBE growth and properties of SiC multi-quantum well structures

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    Other1 citations
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    Other1 citations
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  6. Untitled

    Other1 citations
    ABI