Article

Diffusion of europium in silicon

D. É. NazyrovUlugbek National University of Uzbekistan, Tashkent, 700174, Uzbekistan

Semiconductorsjournal2003en

ABI

Abstract

The diffusion of europium in silicon has been studied for the first time in the temperature range 1100–1250°C by the direct radioactive-tracer method. The diffusion parameters of europium impurity in silicon have been established.

Topics

Advanced Materials Characterization Techniques Semiconductor materials and interfaces Intermetallics and Advanced Alloy Properties

Identifiers

DOI: 10.1134/1.1575359

Citations and references

Cited by 1 1 references

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