Neutron transmutation doped far-infrared p-Ge laser
E. W. NelsonUniv. of Central Florida (United States)Elena FlitsiyanUniv. of Central Florida (United States)A. V. MuravjovUniv. of Central Florida (United States)M. V. DolguikhUniv. of Central Florida (United States)Robert E. PealeUniv. of Central Florida (United States)S. H. KleckleyW.G. VernetsonUniv. of Florida (United States)V. Z. TsipinUzbekistan Academy of Science (Uzbekistan)
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIEjournal2003en
ABI
Abstract
Far-infrared p-Ge laser operation in an active crystal prepared by transmutation doping is demonstrated for the first time. Though saturated current density in the prepared active crystal is twice lower than optimal, the laser performance is comparable to that of good lasers made from commercially produced melt grown p-Ge. The current saturation behavior of this material confirms the expected higher doping uniformity over melt grown laser rods.
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