The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass
П. Б. ПарчинскийNational University of Uzbekistan, Tashkent, 700174, UzbekistanС. И. ВласовNational University of Uzbekistan, Tashkent, 700174, UzbekistanAslan NasirovNational University of Uzbekistan, Tashkent, 700174, Uzbekistan
ABI
Abstract
The effect of γ-ray radiation on the density of surface states at the interface between silicon and lead-borosilicate glass is studied. It is established that, at radiation doses higher than 106 rad, a local peak in the surface-state density at E=E c −(0.32±0.04) eV is observed. It is shown that the interface between Si and lead-borosilicate glass is more resistant to irradiation with γ-ray photons than is the Si-SiO2 interface obtained by thermal oxidation of the silicon surface.
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