Article

Modification of Silicon Oxide by High Energy Electron Beam

E. KolesnikovaA.F. Ioffe Physicotechnical Institute RASA. А. СитниковаRussian Academy of SciencesВ. И. СоколовRussian Academy of SciencesM. V. ZamoryanskayaRussian Academy of Sciences

Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomenabook series2005en

ABI

Abstract

During interaction between thin film SiO2 and electron beam with high power density, amorphous silicon dioxide modifies. Silicon nanoclusters are formed in radiated area. Result of this interaction is formation of Si/SiO2 nanocomposite. We studied modified SiO2 by TEM, microdiffraction and cathodoluminescence.

Topics

Silicon Nanostructures and Photoluminescence Ion-surface interactions and analysis Advanced Surface Polishing Techniques

Identifiers

DOI: 10.4028/www.scientific.net/ssp.108-109.729

Citations and references

Cited by 04 references

Metrics — AkademScholar · Coming soon