Synthesis of semiconductor nanowires by pulsed current electrodeposition of metal with subsequent sulfurization
С. А. ГавриловHahn-Meitner-Institute Berlin, Abt. SE 2, Glienicker Straße 100, 14109 Berlin, GermanyL. NosovaHahn-Meitner-Institute Berlin, Abt. SE 2, Glienicker Straße 100, 14109 Berlin, GermanyI. SieberHahn-Meitner-Institute Berlin, Abt. SE 1, Kekuléstr. 5, 12489 Berlin, GermanyAbdelhak BelaidiHahn-Meitner-Institute Berlin, Abt. SE 2, Glienicker Straße 100, 14109 Berlin, GermanyL. DloczikHahn-Meitner-Institute Berlin, Abt. SE 2, Glienicker Straße 100, 14109 Berlin, GermanyTh. DittrichHahn-Meitner-Institute Berlin, Abt. SE 2, Glienicker Straße 100, 14109 Berlin, Germany
ABI
Abstract
Abstract Semiconductor nanowires of CdS and Cu x S were embedded into porous anodic alumina (PAA) by sulfurization of the metal precursors. Pores of PAA were filled with Cd and Cu by ac electrochemical preparation while the PAA layers remained on the Al‐substrate. Deposited metal and semiconductor wires were characterized by scanning electron microscopy and X‐ray diffraction. Photovoltage spectroscopy was applied to demonstrate semiconductor behaviour of CdS nanowires manufactured by the proposed technique. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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