Article

Preparation and Thermoelectric Properties of Polycrystalline Si0.4Ge0.6

I. G. AtabaevPhysicotechnical InstituteN. A. MatchanovFizika-Solntse Research and Production Association, Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. Mavlanova 2b, Tashkent, 700084, UzbekistanÉ. N. BakhranovFizika-Solntse Research and Production Association, Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. Mavlanova 2b, Tashkent, 700084, UzbekistanМ. С. СаидовFizika-Solntse Research and Production Association, Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. Mavlanova 2b, Tashkent, 700084, Uzbekistan

Inorganic Materialsjournal2005en

ABI

Abstract

No abstract available.

Topics

Semiconductor materials and interfaces Chalcogenide Semiconductor Thin Films Thin-Film Transistor Technologies

Identifiers

DOI: 10.1007/s10789-005-0256-0

Citations and references

Cited by 1 17 references

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