Article

Mössbauer study of the Ge two-electron donor centers in PbSe

Е. И. ТеруковIoffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, RussiaE. S. KhuzhakulovTashkent Regional Pedagogical Institute, Dmitrov st. 4, Angren, Tashkent Region, 702500, Uzbekistan

Semiconductorsjournal2005en

ABI

Abstract

Mössbauer emission spectroscopy at 73As(73Ge) is used to show that the charge state of the 73Ge antisite defect formed in the anion sublattice after the radioactive transformation of 73As is independent of the position of the Fermi level. In contrast, the 73Ge center in the cation sublattice of PbSe is an electrically active substitutional impurity. For the n-type samples, the spectrum corresponds to the neutral state of the donor center (73Ge2+), and for the p-type samples, the spectrum corresponds to the doubly ionized state (73Ge4+) of this center.

Topics

Semiconductor materials and interfaces Chalcogenide Semiconductor Thin Films Solid-state spectroscopy and crystallography

Identifiers

DOI: 10.1134/1.2140305

Citations and references

Cited by 02 references

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