Article

p-n junctions obtained in (Ge2)x(GaAs)1–x varizone solid solutions by liquid phase epitaxy

Б. СапаевPhysical and Technical Institute of Uzbek Academy of Sciences, 2b, G. Mavlanov str.,700084 Tashkent, Republic of Uzbekistan

Semiconductor Physics Quantum Electronics & Optoelectronicsjournal2005en

ABI

Abstract

Fig. 1. Scheme of the cascade solar cell based on (Ge 2 ) x (GaAs) 1-x graded gap structure: 1 -n-GaAs-substrate, 2 -variable gap solid solution n-(Ge 2 ) x (GaAs), 3 -p-(Ge 2 ) x (GaAs) 1-x .

Topics

Semiconductor materials and interfaces Phase-change materials and chalcogenides Silicon Nanostructures and Photoluminescence

Identifiers

DOI: 10.15407/spqeo8.04.033

Citations and references

Cited by 02 references

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