Temperature profile along a nanowhisker growing in high vacuum
N. V. SibirevInstitute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, 190103, RussiaІ. П. СошніковSt. Petersburg Physicotechnical Research and Education Center, Russian Academy of Sciences, St. Petersburg, 194021, RussiaВ. Г. ДубровскийIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaE. ArshanskySt. Petersburg Physicotechnical Research and Education Center, Russian Academy of Sciences, St. Petersburg, 194021, Russia
ABI
Abstract
A theoretical model describing the temperature profile along a nanowhisker (NW) growing in high vacuum is proposed. Under such conditions, the growing crystal is cooled due to thermal radiation from the surface. Knowledge of the temperature field is necessary for simulation of the NW growth process and determination of the properties of NWs obtained using molecular beam epitaxy and magnetron sputtering methods. Theoretical predictions are in good agreement with experimental data for a model system. For GaAs nanowhiskers with a length of 15 µm and a diameter of 30 nm, the difference between the temperature of the crystal apex and that of the substrate can be about 30 K.
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